2N5679 데이터시트 PDF ( Data sheet )

Continental Device India Limited An ISO, TS 16949, ISO 9001 and ISO 14001 Certified Company PNP, NPN HIGH VOLTAGE SILICON TRANSISTORS 2N5679 2N5680 PNP TO-39 2N5681 2N5682 NPN TO-39 These Are High Voltage & High Current, General Purpose Transistors ABSOLUTE MAXIMUM RATINGS. DESCRIPTION SYMBOL

2N5679 2N5680 PNP SILICON 2N5681 2N5682 NPN SILICON CASE 79-02, STYLE 1 TO-5 (TO-205AA) GENERAL PURPOSE TRANSISTOR MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current Continuous @Total Device Dissipation TA = 25°C Derate abov

2N5679 2N5680 PNP 2N5681 2N5682 NPN COMPLEMENTARY SILICON POWER TRANSISTORS TO-39 CASE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N5679, 2N5681 series devices are complementary silicon power transistors, manufactured by the epitaxial planar process, designed for ge

2N5679 & 2N5680 PNP Power Silicon Transistor Features JAN, JANTX, JANTXV, JANS, and JANSR 100K rads (si) per MIL-PRF-19500, 560 TO-39 (TO-205AD) Package Rev. V1 Electrical Characteristics Parameter Off Characteristics Collector - Emitter Breakdown Voltage Collector - Emitter Cutoff Current Colle

2 AMP PNP Sorted by IC, then VCEO Part Number mIaCx (A) mVCaExO (V) Ratings based on 25˚C case temperature unless otherwise specified mhFiEn mhaFEx @Ic (A) VmCEa(sxat) (V) @(A)IC mfTin (MHz) mPaTx *TC=100°C (W) Package 2N3205 2 40 20 60 Note 1 0.4 Note 1 Note 1 40 TO-59 2N32