2N6431 데이터시트 PDF ( Data sheet )

2N6430 2N6431 NPN 2N6432 2N6433 PNP COMPLEMENTARY SILICON TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6430 series devices are complementary small signal silicon transistors manufactured by the epitaxial planar process, designed for high voltage amplifie

Continental Device India Limited An ISO, TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON TRANSISTORS 2N6430, 6431 TO-18 Metal Can Package General Purpose Transistors. ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise) DESCRIPTION SYMBOL Collector Emitter Voltage VCE

MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Continuous Total Device Dissipation (a T"a = 25°C Derate above 25°C @Total Device Dissipation Tq = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO

UNISONIC TECHNOLOGIES CO., LTD 2N60 2 Amps, 600 Volts N-CHANNEL MOSFET DESCRIPTION The UTC 2N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This powe

UNISONIC TECHNOLOGIES CO., LTD 2N60-E 2A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 2N60-E is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. Thi