2N6520 데이터시트 PDF ( Data sheet )

Elektronische Bauelemente 2N6520 -0.5 A, -350 V PNP Plastic Encapsulated Transistor FEATURES High voltage transistors RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 Collector Base Emitter GH J AD B K E CF REF. A B C D E F G H J K Millimeter Min.

2N6515 2N6516 2N6517 NPN 2N6518 2N6519 2N6520 PNP COMPLEMENTARY SILICON HIGH VOLTAGE TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6515, 2N6518 series devices are complementary silicon transistors designed for high voltage driver and amplifier application

Transys Electronics LIMITED TO-92 Plastic-Encapsulated Transistors 2N6520 TRANSISTOR (PNP) FEATURES Power dissipation PCM : 0.625 W (Tamb=25℃) Collector current ICM : -0.5 Collector-base voltage A V(BR)CBO : -350 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +15

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N6515, D High Voltage Transistors COLLECTOR 3 COLLECTOR 3 2 BASE NPN 1 EMITTER 2 BASE PNP 1 EMITTER NPN 2N6515 2N6517 PNP 2N6519 2N6520 MAXIMUM RATINGS Rating 2N6517 Symbol 2N6515 2N6519 2N6520 Collector Emitter Voltage Coll

UNISONIC TECHNOLOGIES CO., LTD 2N60 2 Amps, 600 Volts N-CHANNEL MOSFET DESCRIPTION The UTC 2N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This powe

UNISONIC TECHNOLOGIES CO., LTD 2N60-E 2A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 2N60-E is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. Thi