2N6578 데이터시트 PDF ( Data sheet )

MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN Silicon Power Darlington Transistors General purpose EpiBase power Darlington transistors, suitable for linear and switching applications. Replacement for 2N3055 and Driver High Gain Darlington Performance Built in Diode Protection for Reverse Polari

2N6578 MECHANICAL DATA Dimensions in mm (inches) NPN BIPOLAR POWER DARLINGTON TRANSISTOR 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) FEATURES 38.61 (1.52) 39.12 (1.54) 0.97 (0.060) 1.10 (0.043) 22.23 (0.875) max. 29.9 (1.177) 30.4 (1.197)

2N6576 2N6577 2N6578 SILICON NPN DARLINGTON POWER TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6576, 2N6577, and 2N6578 are silicon NPN Darlington power transistors designed for general purpose switching applications. MARKING: FULL PART NUMBER TO-3 CAS

UNISONIC TECHNOLOGIES CO., LTD 2N60 2 Amps, 600 Volts N-CHANNEL MOSFET DESCRIPTION The UTC 2N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This powe

UNISONIC TECHNOLOGIES CO., LTD 2N60-E 2A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 2N60-E is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. Thi