2N7000K 데이터시트 PDF ( Data sheet )

N-Channel MOSFET ESD Protected 2000V Transistor 2N7000K N-Channel MOSFET ESD Protected 2000V Transistor Features ESD protected 2000V High density cell design for low RDS(ON) Voltage controlled small signal switch Rugged and reliable High saturation current capability RoHS compliance TO-92

SEMICONDUCTOR TECHNICAL DATA INTERFACE AND SWITCHING APPLICATION. FEATURES ESD Protected 2000V. High density cell design for low RDS(ON). Voltage controlled small signal switch. Rugged and reliable. High saturation current capablity. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Drain-Source Vol

2N7000K N-Channel Enhancement Mode MOSFET High Speed Switching Application Features ESD rating: 1000V (HBM) Low On-Resistance: RDS(on) < 3Ω @ VGS = 10V High power and current handling capability Very fast switching Halogen free and RoHS compliant device Applications High speed line driver

2N7000KL, BS170KL New Product Vishay Siliconix N-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 rDS(on) (W) 2 @ VGS = 10 V 4 @ VGS = 4.5 V VGS(th) (V) 1 0 to 2 1.0 2.5 5 ID (A) 0.47 0.33 D TrenchFETr Power MOSFET D ESD Protected: 2000 V APPLICATIONS D Direct Logic-Level Inter

UNISONIC TECHNOLOGIES CO., LTD 2N70 2 Amps, 700 Volts N-CHANNEL POWER MOSFET DESCRIPTION Power MOSFET The UTC 2N70 is a high voltage MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. Thi

UNISONIC TECHNOLOGIES CO., LTD 2N70-M Preliminary 2 Amps, 700 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 2N70-M is a high voltage MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics

2N7000 Rev.E Mar.-2016 DATA SHEET 描述 , Descriptions TO-92 塑封封 N 道 MOS 效 管。N-CHANNEL MOSFET in a TO-92 Plastic Package. 特征 , Features 敏的控制 流和 低的 持 流。 Sensitive gate trigger current and Low Holding current. 用途 , Applications 用作一般的