2N7002KG 데이터시트 PDF ( Data sheet )

Elektronische Bauelemente 2N7002KG 190 mA, 60 V, RDS(ON) = 2 Ω N-Ch Small Signal MOSFET with Gate Protection RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES - 2 kV ESD Protection - Lower On-resistance: 2 Ω - Low Threshold: 2 V (Typ.) - Low Input Capacitance: 2

Main Product Characteristics VDSS 60V RDS(on) 7.5ohm(max.) ID A Features and Benefits Advanced trench MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 15

Main Product Characteristics: VDSS 60V RDS(on) 7.5ohm(max.) ID A Features and Benefits: Advanced trench MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery

UNISONIC TECHNOLOGIES CO., LTD 2N70 2 Amps, 700 Volts N-CHANNEL POWER MOSFET DESCRIPTION Power MOSFET The UTC 2N70 is a high voltage MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. Thi

UNISONIC TECHNOLOGIES CO., LTD 2N70-M Preliminary 2 Amps, 700 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 2N70-M is a high voltage MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics

2N7000 Rev.E Mar.-2016 DATA SHEET 描述 , Descriptions TO-92 塑封封 N 道 MOS 效 管。N-CHANNEL MOSFET in a TO-92 Plastic Package. 特征 , Features 敏的控制 流和 低的 持 流。 Sensitive gate trigger current and Low Holding current. 用途 , Applications 用作一般的