2N7002KU 데이터시트 PDF ( Data sheet )

SEMICONDUCTOR TECHNICAL DATA INTERFACE AND SWITCHING APPLICATION. FEATURES ESD Protected 2000V.(Human Body Model) High density cell design for low RDS(ON). Voltage controlled small signal switch. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING UNIT Drain-Source Voltage Gate-Source Voltage

2N7002KU N-Channel Enhancement Mode MOSFET High Speed Switching Application Features ESD rating: 1000V (HBM) Low On-Resistance: RDS(on) < 3Ω @ VGS = 10V High power and current handling capability Very fast switching RoHS compliant device Applications High speed line driver SOT-323 Order

Main Product Characteristics VDSS 60V RDS(on) 3Ω(max.) ID 0.3A Features and Benefits SOT-23 Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery E

UNISONIC TECHNOLOGIES CO., LTD 2N70 2 Amps, 700 Volts N-CHANNEL POWER MOSFET DESCRIPTION Power MOSFET The UTC 2N70 is a high voltage MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. Thi

UNISONIC TECHNOLOGIES CO., LTD 2N70-M Preliminary 2 Amps, 700 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 2N70-M is a high voltage MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics

2N7000 Rev.E Mar.-2016 DATA SHEET 描述 , Descriptions TO-92 塑封封 N 道 MOS 效 管。N-CHANNEL MOSFET in a TO-92 Plastic Package. 特征 , Features 敏的控制 流和 低的 持 流。 Sensitive gate trigger current and Low Holding current. 用途 , Applications 用作一般的