2N7002T 데이터시트 PDF ( Data sheet )

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-523 Plastic-Encapsulate MOSFETS 2N7002T MOSFET (N-Channel) V(BR)DSS 60 V RDS(on)MAX 5Ω@10V 7Ω@5V ID 115mA SOT-523 3 1. GATE 2. SOURCE 3. DRAIN 1 2 FEATURE - High density cell design for low RDS(ON) - Voltage controlled small signa

2N7002T N-Channel Enhancement Mode Field Effect Transistor October 2007 2N7002T N-Channel Enhancement Mode Field Effect Transistor Features Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input, Output Leakage Ultra-Small Surface Mount Package Lea

Elektronische Bauelemente 2N7002T 115 mAMPS, 60VOLTS, RDS(on)=7.5 W Small Signal MOSFET RoHS Compliant Product Small Signal MOSFET 115 mAmps, 60 Volts N Channel SOT 523 MAXIMUM RATINGS Rating Drain Source Voltage Drain Gate Voltage (RGS = 1.0 MΩ) Gate Source Voltage Continuous Non repetitive

2N7002T N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features · · · · · · · · · · · · · · Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input, Output Leakage Ultra-Small Surface Mount Package SOT-523 TOP VIEW A D B C G G S NEW PRODUC

UNISONIC TECHNOLOGIES CO., LTD 2N70 2 Amps, 700 Volts N-CHANNEL POWER MOSFET DESCRIPTION Power MOSFET The UTC 2N70 is a high voltage MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. Thi

UNISONIC TECHNOLOGIES CO., LTD 2N70-M Preliminary 2 Amps, 700 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 2N70-M is a high voltage MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics

2N7000 Rev.E Mar.-2016 DATA SHEET 描述 , Descriptions TO-92 塑封封 N 道 MOS 效 管。N-CHANNEL MOSFET in a TO-92 Plastic Package. 特征 , Features 敏的控制 流和 低的 持 流。 Sensitive gate trigger current and Low Holding current. 用途 , Applications 用作一般的