2SA1012 데이터시트 PDF ( Data sheet )

2SA1012(PNP) TO-220 Transistor 1. BASE 2. COLLECTOTR 3. EMITTER TO-220 Features 3 2 1 HIGH CURRENT SWITCHING APPLICATIONS. Low Collector Saturation Voltage : VCE(SAT) = - 0.4V(MAX) at IC= - 3A High Speed Swithing Time : tstg = 1.0us (Typ.) Complementary to 2SC2562 MAXIMUM RATINGS (TA=25℃

2SA1012 Rev.F Mar.-2016 DATA SHEET 描述 , Descriptions TO-220 塑封封 PNP 半 三 管。Silicon PNP transistor in a TO-220 Plastic Package.  特征 , Features 和 降低, 速度快, 2SC2562 互 。 Low collector saturation voltage, high speed switching time, complementary to 2SC2562. 

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  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2SA1012 Features Capable of 25 Watts of Power Dissipation. Collector-current -5.0A and Collector-base Voltage -60V Operating and storage junc

2SA1012 PNP Silicon Epitaxial Planar Transistor for high current switching applications. The transistor is subdivided into two group, O and Y, according to its DC current gain. Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Coll

Transistors 2SA0683 (2SA683), 2SA0684 (2SA684) Silicon PNP epitaxial planar type Unit: mm ■ Features Allowing supply with the radial taping ■ Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) 2SA0683 2SA0684 VCEO VEBO IC ICP PC Tj Tstg Symbol VCBO Rating 30

Transistors 2SA0683 (2SA683), 2SA0684 (2SA684) Silicon PNP epitaxial planar type Unit: mm ■ Features Allowing supply with the radial taping ■ Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) 2SA0683 2SA0684 VCEO VEBO IC ICP PC Tj Tstg Symbol VCBO Rating 30

Transistors 2SA0879 (2SA879) Silicon PNP epitaxial planar type For general amplification Complementary to 2SC1573 ■ Features High collector-emitter voltage (Base open) VCEO 0.7+0.3 0.2 0.7±0.1 Unit: mm 5.9±0.2 4.9±0.2 ■ Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage