2SA1593 데이터시트 PDF ( Data sheet )

isc Silicon PNP Power Transistor INCHANGE Semiconductor 2SA1593 DESCRIPTION ·High breakdown voltage and large current capacity ·Fast switching speed ·Small and slim package permitting ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·

Ordering number:ENN2511A PNP, NPN Epitaxial Planar Silicon Transistors 2SA1593, 2SC4135 High-Voltage Switching Applications Applications · Power supplies, relay derivers, lamp drivers. Features · Adoption of FBET, MBIT processes. · High breakdown voltage and large current capacity. · Fast swit

Ordering number : EN2511B 2SA1593, 2SC4135 Bipolar Transistor (-)100V, (-)2A, Low VCE(sat), (PNP)NPN Single TP, TP-FA http:, , onsemi.com Applications Power supplies, relay derivers, lamp drivers Features Adoption of FBET, MBIT processes High breakdown voltage and large current capacity F

Transistors 2SA0683 (2SA683), 2SA0684 (2SA684) Silicon PNP epitaxial planar type Unit: mm ■ Features Allowing supply with the radial taping ■ Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) 2SA0683 2SA0684 VCEO VEBO IC ICP PC Tj Tstg Symbol VCBO Rating 30

Transistors 2SA0683 (2SA683), 2SA0684 (2SA684) Silicon PNP epitaxial planar type Unit: mm ■ Features Allowing supply with the radial taping ■ Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) 2SA0683 2SA0684 VCEO VEBO IC ICP PC Tj Tstg Symbol VCBO Rating 30

Transistors 2SA0879 (2SA879) Silicon PNP epitaxial planar type For general amplification Complementary to 2SC1573 ■ Features High collector-emitter voltage (Base open) VCEO 0.7+0.3 0.2 0.7±0.1 Unit: mm 5.9±0.2 4.9±0.2 ■ Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage