2SA2223 데이터시트 PDF ( Data sheet )

2SA2223 Audio Amplification Transistor Features and Benefits LAPT (High frequency multi emitter transistor) Small package (TO-3P) High power handling capacity, 160 W Improved sound output by reduced on-chip impedance For professional audio (PA) applications, VCEO = 260 V versions available

isc Silicon PNP Power Transistor INCHANGE Semiconductor 2SA2223A DESCRIPTION ·High frequency multi emitter transistor ·Small package(TO-3P) ·High power handling capacity ,160W ·Complement to Type 2SC6145A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation. AP

2SA2223A Audio Amplification Transistor Features and Benefits LAPT (High frequency multi emitter transistor) Small package (TO-3P) High power handling capacity, 160 W Improved sound output by reduced on-chip impedance Complementary to 2SC6145A Package: 3-Lead TO-3P Description Sanken LAPT tra

Transistors 2SA0683 (2SA683), 2SA0684 (2SA684) Silicon PNP epitaxial planar type Unit: mm ■ Features Allowing supply with the radial taping ■ Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) 2SA0683 2SA0684 VCEO VEBO IC ICP PC Tj Tstg Symbol VCBO Rating 30

Transistors 2SA0683 (2SA683), 2SA0684 (2SA684) Silicon PNP epitaxial planar type Unit: mm ■ Features Allowing supply with the radial taping ■ Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) 2SA0683 2SA0684 VCEO VEBO IC ICP PC Tj Tstg Symbol VCBO Rating 30

Transistors 2SA0879 (2SA879) Silicon PNP epitaxial planar type For general amplification Complementary to 2SC1573 ■ Features High collector-emitter voltage (Base open) VCEO 0.7+0.3 0.2 0.7±0.1 Unit: mm 5.9±0.2 4.9±0.2 ■ Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage