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2SB1218A 데이터시트 PDF ( Data sheet )이 부품은 PNP Silicon Epitaxial Planar Transistor의 기능을 가지고 있습니다. |
2SB1218A의 핀아웃 및 회로도를 보려면 검색 결과에 있는 PDF 아이콘을 클릭하세요. |
번호 | 부품번호 | 상세설명 및 전자부품 기능 | 제조사 |
1 | 2SB1218A Panasonic Semiconductor | Silicon PNP Epitaxial Transistor Transistor
2SB1218A
Silicon PNP epitaxial planer type
For general amplification Complementary to 2SD1819A
2.1±0.1
Unit: mm
s Features
q q
0.425
1.25±0.1
0.425
High foward current transfer ratio hFE. S-Mini type package, allowing downsizing of the equipment and automatic insertion through th | ![]() |
2 | 2SB1218A TRANSYS Electronics | Plastic-Encapsulated Transistors Transys
Electronics
L I M I T E D
SOT-323 Plastic-Encapsulated Transistors
SOT-323
2SB1218A
FEATURES Power dissipation PCM:
TRANSISTOR (PNP)
1. BASE 2. EMITTER 3. COLLECTOR
1. 25¡ 0. 05
1. 01 R EF
w.
150
mW (Tamb=25℃)
2. 30¡ 0. 05
Collector current -100 mA ICM: Collector-base voltage - | ![]() |
3 | 2SB1218A SeCoS | PNP Silicon Epitaxial Paner Transistors 2SB1218A
Elektronische Bauelemente -0.1A , -60V PNP Silicon Epitaxial Paner Transistors
RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free
APPLICATIONS
General Purpose Amplification
A
L
3
SOT-323
FEATURES
3
High DC Current Gain Complementary to 2SD1819A
K
Top View | ![]() |
4 | 2SB1218A Jin Yu Semiconductor | TRANSISTOR 2SB1 21 8 A
TRANSISTOR(PNP)
FEATURES High DC Current Gain Complementary to 2SD1819A APPLICATIONS General Purpose Amplification MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol VCBO VCEO VEBO IC PC RΘJA Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltag | ![]() |
데이터시트 다운로드![]()
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국내 전자부품 판매점 |
디바이스마트 IC114 엘레파츠 ICbanQ |
부품번호 | 상세설명 | 제조업체 | |
2SB030070MLJY | 2SB030070MLJY SCHOTTKY BARRIER DIODE CHIPS 2SB030070MLJY
2SB030070MLJY SCHOTTKY BARRIER DIODE CHIPS
DESCRIPTION
Ø 2SB030070MLJY is a schottky barrier diode chips fabricated in silicon epitaxial planar technology; Ø Ø Ø Ø Ø Low power losses, high efficiency; Guard ring construction for transient protection; High ESD capability; High sur |
![]() Silan Microelectronics |
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부품번호 | 상세설명 | 제조업체 | |
2SB035030MLJY | 2SB035030MLJY SCHOTTKY BARRIER DIODE CHIPS 2SB035030MLJY
2SB035030MLJY SCHOTTKY BARRIER DIODE CHIPS
DESCRIPTION
Ø 2SB035030MLJY is a schottky barrier diode chips
Lb La
fabricated in silicon epitaxial planar technology; Ø Ø Ø Ø Ø Low power losses, high efficiency; Guard ring construction for transient protection; High ESD capability; H |
![]() Silan Microelectronics |
![]() |
부품번호 | 상세설명 | 제조업체 | |
2SB035100ML | 2SB035100ML SCHOTTKY BARRIER DIODE CHIPS 2SB035100ML
2SB035100ML SCHOTTKY BARRIER DIODE CHIPS
DESCRIPTION
Ø 2SB035100ML is a schottky barrier diode chips
Lb La
fabricated in silicon epitaxial planar technology; Ø Ø Ø Ø Ø Low power losses, high efficiency; Guard ring construction for transient protection; High ESD capability; High su |
![]() Silan Microelectronics |
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DataSheet.kr | 2020 | 연락처 | 링크모음 | 신규 | 사이트맵 : 1, 2 |