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2SB928A 데이터시트 PDF ( Data sheet )이 부품은 Transistor의 기능을 가지고 있습니다. |
2SB928A의 핀아웃 및 회로도를 보려면 검색 결과에 있는 PDF 아이콘을 클릭하세요. |
번호 | 부품번호 | 상세설명 및 전자부품 기능 | 제조사 |
1 | 2SB928A Panasonic Semiconductor | Silicon PNP epitaxial planar type(For power amplification) Power Transistors
2SB928, 2SB928A
Silicon PNP epitaxial planar type
For power amplification For TV vartical deflection output Complementary to 2SD1250 and 2SD1250A
8.5±0.2 6.0±0.5 3.4±0.3
Unit: mm
1.0±0.1
10.0±0.3
1.5±0.1
10.5min.
q q q
High collector to emitter VCEO High collector powe | ![]() |
2 | 2SB928A Panasonic Semiconductor | Power Transistors Power Transistors
2SB0928 (2SB928), 2SB0928A (2SB928A)
Silicon PNP epitaxial planar type
For Power amplification For TV vertical deflection output Complementary to 2SD1250 and 2SD1250A ■ Features
High collector-emitter voltage (Base open) VCEO High collector power dissipation PC N type packa | ![]() |
3 | 2SB928A Kexin | Transistor SMD Type
Silicon PNP Epitaxial Planar Type 2SB928A
TO-252
+0.15 1.50 -0.15
Transistors
Unit: mm 2.30
+0.8 0.50-0.7 +0.1 -0.1
Features
High collector to emitter VCEO High collector power dissipation PC
+0.2 9.70 -0.2
6.50 +0.2 5.30-0.2
+0.15 -0.15
+0.1 0.80-0.1
+0.15 0.50 -0.15
0.127 max
2.3 | ![]() |
4 | 2SB928A TY Semiconductor | Transistor Product specification
2SB928A
TO-252
+0.15 1.50 -0.15
Unit: mm 2.30
+0.8 0.50-0.7 +0.1 -0.1
Features
High collector to emitter VCEO High collector power dissipation PC
+0.2 9.70 -0.2
6.50 +0.2 5.30-0.2
+0.15 -0.15
+0.1 0.80-0.1
+0.15 0.50 -0.15
0.127 max
2.3
+0.15 4.60-0.15
+0.1 0.60-0.1
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국내 전자부품 판매점 |
디바이스마트 IC114 엘레파츠 ICbanQ |
부품번호 | 상세설명 | 제조업체 | |
2SB030070MLJY | 2SB030070MLJY SCHOTTKY BARRIER DIODE CHIPS 2SB030070MLJY
2SB030070MLJY SCHOTTKY BARRIER DIODE CHIPS
DESCRIPTION
Ø 2SB030070MLJY is a schottky barrier diode chips fabricated in silicon epitaxial planar technology; Ø Ø Ø Ø Ø Low power losses, high efficiency; Guard ring construction for transient protection; High ESD capability; High sur |
![]() Silan Microelectronics |
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부품번호 | 상세설명 | 제조업체 | |
2SB035030MLJY | 2SB035030MLJY SCHOTTKY BARRIER DIODE CHIPS 2SB035030MLJY
2SB035030MLJY SCHOTTKY BARRIER DIODE CHIPS
DESCRIPTION
Ø 2SB035030MLJY is a schottky barrier diode chips
Lb La
fabricated in silicon epitaxial planar technology; Ø Ø Ø Ø Ø Low power losses, high efficiency; Guard ring construction for transient protection; High ESD capability; H |
![]() Silan Microelectronics |
![]() |
부품번호 | 상세설명 | 제조업체 | |
2SB035100ML | 2SB035100ML SCHOTTKY BARRIER DIODE CHIPS 2SB035100ML
2SB035100ML SCHOTTKY BARRIER DIODE CHIPS
DESCRIPTION
Ø 2SB035100ML is a schottky barrier diode chips
Lb La
fabricated in silicon epitaxial planar technology; Ø Ø Ø Ø Ø Low power losses, high efficiency; Guard ring construction for transient protection; High ESD capability; High su |
![]() Silan Microelectronics |
![]() |
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DataSheet.kr | 2020 | 연락처 | 링크모음 | 신규 | 사이트맵 : 1, 2 |