2SC2073 데이터시트 PDF ( Data sheet )

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UNISONIC TECHNOLOGIES CO., LTD 2SC2073 Preliminary NPN EPITAXIAL SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS DESCRIPTION The UTC 2SC2073 is an NPN silicon power transistors, it uses UTC’s advanced technology to provide customers with high collector base voltage, etc. The UTC 2SC2073 is s

2SC2073A TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT Process) 2SC2073A Power Amplifier Applications Vertical Output Applications Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Collector-base voltage VCBO 150 V Collector-emitter voltage VCEO 1

2SC2073A(3DA2073A) 硅 NPN 半 三 管, SILICON NPN TRANSISTOR 用途:用于功率放大和 出。 Purpose: Power amplifier applications, vertical output applications. 特点: 的安全工作 ,于 2SA940A(3CA940A)互 。 Features: Wide Safe Operating Area, complementary to 2SA940A(3CA940A).

2SC0108T2Dx-xx Preliminary 2SC0108T2Dx-xx Description & Application Manual Dual Channel Ultra-compact Low-cost SCALE-2 Driver Core Abstract The new low-cost SCALE-2 dual-driver core 2SC0108T2Dx-xx combines unrivalled compactness with broad applicability. The driver was designed for universal applica

Transistors 2SC0829 (2SC829) Silicon NPN epitaxial planar type For high-frequency amplification 5.0±0.2 Unit: mm 4.0±0.2 Optimum for RF amplification, oscillation, mixing, and IF stage of FM, AM radios 0.7±0.1 0.7±0.2 12.9±0.5 ■ Absolute Maximum Ratings Ta = 25°C Parame

Transistor 2SC0829 (2SC829) Silicon NPN epitaxial planar type For high-frequency amplification 5.0±0.2 Unit: mm 4.0±0.2 Optimum for RF amplification, oscillation, mixing, and IF stage of FM, AM radios 0.7±0.1 0.7±0.2 12.9±0.5 ■ Absolute Maximum Ratings Ta = 25°C Parameter