2SC2230 데이터시트 PDF ( Data sheet )

2SC2230(3DG2230) 2SC2230A(3DG2230A) 硅 NPN 半 三 管, SILICON NPN TRANSISTOR 用途:用于普通高 放大,彩 伴音 出, Purpose: High voltage general amplifier, color TV class B sound output applications. 特点:VCEO 高,直流 流增益高, Features: High voltage, high DC current gain. �

2SC2230(3DG2230) 2SC2230A(3DG2230A) 硅 NPN 半 三 管, SILICON NPN TRANSISTOR 用途:用于普通高 放大,彩 伴音 出, Purpose: High voltage general amplifier, color TV class B sound output applications. 特点:VCEO 高,直流 流增益高, Features: High voltage, high DC current gain. �

TO-92MOD PLASTIC-ENCAPSULATE TRANSISTORS 2SC2230 TRANSISTOR (NPN) FEATURES Power dissipation PCM: 0.8W (Tamb=25ºC) Collector Current ICM: 0.1A Collector-base voltage V (BR) CBO TO-92 MOD 1. EMITTER 2. COLLECTOR 3. BASE : 200V Operating and storage junction temperature range TJ, Tstg: -55ºC to

2SC2230,2SC2230A TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT Process) 2SC2230,2SC2230A High-Voltage General Amplifier Applications Color TV Class-B Sound Output Applications Unit: mm High breakdown voltage: VCEO = 180 V (2SC2230A) High DC current gain Maximum Ratings (Ta = 25°C)

2SC0108T2Dx-xx Preliminary 2SC0108T2Dx-xx Description & Application Manual Dual Channel Ultra-compact Low-cost SCALE-2 Driver Core Abstract The new low-cost SCALE-2 dual-driver core 2SC0108T2Dx-xx combines unrivalled compactness with broad applicability. The driver was designed for universal applica

Transistors 2SC0829 (2SC829) Silicon NPN epitaxial planar type For high-frequency amplification 5.0±0.2 Unit: mm 4.0±0.2 Optimum for RF amplification, oscillation, mixing, and IF stage of FM, AM radios 0.7±0.1 0.7±0.2 12.9±0.5 ■ Absolute Maximum Ratings Ta = 25°C Parame

Transistor 2SC0829 (2SC829) Silicon NPN epitaxial planar type For high-frequency amplification 5.0±0.2 Unit: mm 4.0±0.2 Optimum for RF amplification, oscillation, mixing, and IF stage of FM, AM radios 0.7±0.1 0.7±0.2 12.9±0.5 ■ Absolute Maximum Ratings Ta = 25°C Parameter