2SC2712 데이터시트 PDF ( Data sheet )

Plastic-Encapsulate Transistors FEATURES Low Noise: NF=1 dB (Typ),10dB(MAX) Complementary to 2SA1162 2SC2712 (NPN) MAXIMUM RATINGS (TA=25 Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature

2SC2712 Rev.E Mar.-2016 DATA SHEET 描述 , Descriptions SOT-23 塑封封 NPN 半 三 管。Silicon NPN transistor in a SOT-23 Plastic Package.  特征 , Features ， 流，放大高， 低，放大 性好。 High voltage, high current, high hFE, low noise, excellent hFE linearity. 用�

TECHNICAL SPECIFICATION SEMICONDUCTOR SOT-23 BIPOLAR TRANSISTORS TRANSISTOR(PNP) RECTRON 2SC2712 FEATURES * Power dissipation PCM : 150 mW(Tamb=25OC) * Collector current ICM : 150 mA * Collector-base voltage V(BR)CBO : 60 V * Operating and storage junction temperature range O O TJ,Tstg: -55 C to

UNISONIC TECHNOLOGIES CO., LTD 2SC2712 AUDIO FREQUENCY AMPLIFIER NPN TRANSISTOR FEATURES * High Voltage and High Current : VCEO=50V, IC=150mA (Max.) * Excellent hFE Linearity : hFE(IC=0.1mA), hFE(IC=2mA)=0.95(Typ.) * High hFE * Low Noise 3 NPN SILICON TRANSISTOR 1 2 SOT-23 *Pb-free plating produ

2SC0108T2Dx-xx Preliminary 2SC0108T2Dx-xx Description & Application Manual Dual Channel Ultra-compact Low-cost SCALE-2 Driver Core Abstract The new low-cost SCALE-2 dual-driver core 2SC0108T2Dx-xx combines unrivalled compactness with broad applicability. The driver was designed for universal applica

Transistors 2SC0829 (2SC829) Silicon NPN epitaxial planar type For high-frequency amplification 5.0±0.2 Unit: mm 4.0±0.2 Optimum for RF amplification, oscillation, mixing, and IF stage of FM, AM radios 0.7±0.1 0.7±0.2 12.9±0.5 ■ Absolute Maximum Ratings Ta = 25°C Parame

Transistor 2SC0829 (2SC829) Silicon NPN epitaxial planar type For high-frequency amplification 5.0±0.2 Unit: mm 4.0±0.2 Optimum for RF amplification, oscillation, mixing, and IF stage of FM, AM radios 0.7±0.1 0.7±0.2 12.9±0.5 ■ Absolute Maximum Ratings Ta = 25°C Parameter