2SCR552P 데이터시트 PDF ( Data sheet )

2SCR552P NPN 3.0A 30V Middle Power Transistor Datasheet Parameter VCEO IC Value 30V 3.0A lFeatures 1) Suitable for Middle Power Driver 2) Complementary PNP Types : 2SAR552P 3) Low VCE(sat) VCE(sat)=0.40V(Max.) (IC, IB=1A, 50mA) 4) Lead Free, RoHS Compliant. lOutline MPT3 Base Collector Emitter

2SCR552P5 Middle Power Transistors (30V , 3A) Parameter VCEO IC Value 30V 3A lFeatures 1)Low saturation voltage,typically 　VCE(sat)=400mV(Max.) 　(IC, IB=1A, 50mA) 2)High speed switching lOutline 　 SOT-89 　 SC-62 MPT3 lInner circuit 　 　 　 　 　 Datasheet lApplication LOW FREQU

2SC0108T2Dx-xx Preliminary 2SC0108T2Dx-xx Description & Application Manual Dual Channel Ultra-compact Low-cost SCALE-2 Driver Core Abstract The new low-cost SCALE-2 dual-driver core 2SC0108T2Dx-xx combines unrivalled compactness with broad applicability. The driver was designed for universal applica

Transistors 2SC0829 (2SC829) Silicon NPN epitaxial planar type For high-frequency amplification 5.0±0.2 Unit: mm 4.0±0.2 Optimum for RF amplification, oscillation, mixing, and IF stage of FM, AM radios 0.7±0.1 0.7±0.2 12.9±0.5 ■ Absolute Maximum Ratings Ta = 25°C Parame

Transistor 2SC0829 (2SC829) Silicon NPN epitaxial planar type For high-frequency amplification 5.0±0.2 Unit: mm 4.0±0.2 Optimum for RF amplification, oscillation, mixing, and IF stage of FM, AM radios 0.7±0.1 0.7±0.2 12.9±0.5 ■ Absolute Maximum Ratings Ta = 25°C Parameter