Datasheet 2SD874A Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	Category
1	2SD874A	NPN EPITAXIAL SILICON TRANSISTOR RoHS 2SD874A 2SD874A TRANSISTOR (NPN) DFEATURES Power dissipation TPCM: 500 mW (Tamb=25℃) .,LCollector current ICM: Collector-base voltage 1A OV(BR)CBO: 60 V Operating and storage junction temperature range CTJ, Tstg: -55℃ to +150℃ SOT-89 1. BASE 2. COLLECTOR 3. EMITTER 1 2 3 IC	WEJ	transistor
2	2SD874A	Silicon NPN Epitaxial Planar Type Transistors SMD Type Transistors Silicon NPN Epitaxial Planar Type 2SD874,2SD874A Features Large collector power dissipation PC. Low collector-emitter saturation voltage VCE(sat). Mini power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine p	Kexin	transistor
3	2SD874A	NPN Plastic Encapsulated Transistor Elektronische Bauelemente 2SD874A 1A , 60V NPN Plastic Encapsulated Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES  Large collector power dissipation PC  Low collector-emitter saturation voltage VCE(sat)  Complementary to 2SB766A CLASSIFICAT	SeCoS	transistor
4	2SD874A	NPN Transistor 2SD874A TRANSISTOR (NPN) FEATURES z Large collector power dissipation PC z Low collector-emitter saturation voltage VCE(sat) z Complementary to 2SB766A MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Vo	Jin Yu Semiconductor	transistor
5	2SD874A	Silicon PNP epitaxial planer type(For low-frequency output amplification) Transistor 2SB766, 2SB766A Silicon PNP epitaxial planer type For low-frequency output amplification Complementary to 2SD874 and 2SD874A Unit: mm s Features q q 2.6±0.1 0.4max. s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SB766 2SB766A 2SB766 VCEO VEBO ICP IC PC*	Panasonic Semiconductor	transistor

2SD Datasheet ( Hoja de datos ) - resultados coincidentes

N.º	Número de pieza	Descripción	Fabricantes	Catagory
1	2SD0592A	Silicon NPN epitaxial planar type www.DataSheet4U.net Transistors 2SD0592A (2SD592A) Silicon NPN epitaxial planar type For low-frequency output amplification Complementary to 2SB0621A (2SB621A) ■ Features 0.7±0.2 Unit: mm 5.0±0.2 4.0±0.2 • Large collector power dissipation PC • Low collector-emitter saturation voltage V	Panasonic Semiconductor	transistor
2	2SD0601	Silicon NPN epitaxial planer type Transistor 2SD601A Silicon NPN epitaxial planer type For general amplification Complementary to 2SB709A 2.8 –0.3 +0.2 Unit: mm s Features q q q 0.65±0.15 +0.25 1.5 –0.05 0.65±0.15 High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). Mini type pac	Panasonic Semiconductor	transistor
3	2SD0601A	Silicon NPN epitaxial planer type Transistor Transistor 2SD0601A (2SD601A) Silicon NPN epitaxial planer type For general amplification Complementary to 2SB0709A (2SB709A) I Features G High foward current transfer ratio hFE. G Low collector to emitter saturation voltage VCE(sat). G Mini type package, allowing downsizing of the equipment and a	Panasonic Semiconductor	transistor
4	2SD0602	Silicon NPN epitaxial planer type Transistors 2SD0602A Silicon NPN epitaxial planer type Unit: mm For general amplification Complementary to 2SB0710A I Features • Low collector to emitter saturation voltage VCE(sat) • Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and t	Panasonic Semiconductor	transistor
5	2SD0602A	Silicon NPN epitaxial planer type Transistors 2SD0602A Silicon NPN epitaxial planer type Unit: mm For general amplification Complementary to 2SB0710A I Features • Low collector to emitter saturation voltage VCE(sat) • Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and t	Panasonic Semiconductor	transistor
6	2SD0638	Silicon NPN epitaxial planar type www.DataSheet4U.net Transistors 2SD0638 (2SD638) Silicon NPN epitaxial planar type For medium-power general amplification Complementary to 2SB0643 (2SB643) (0.4) (1.5) (1.5) Unit: mm 6.9±0.1 2.5±0.1 (1.0) 2.0±0.2 ■ Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitt	Panasonic Semiconductor	transistor
7	2SD0662	Silicon NPN epitaxial planar type www.DataSheet4U.net Transistors 2SD0662, 2SD0662B (2SD662, 2SD662B) Silicon NPN epitaxial planar type For high breakdown voltage general amplification 6.9±0.1 2.5±0.1 (1.0) Unit: mm (0.4) (1.5) 2.0±0.2 • High collector-emitter voltage (Base open) VCEO • High transition frequency fT •	Panasonic Semiconductor	transistor

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Número de pieza	Descripción	Fabricantes	PDF
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