2SJ76 데이터시트 PDF ( Data sheet )

2SJ76, 2SJ77, 2SJ78, 2SJ79 Silicon P-Channel MOS FET Application High frequency and low frequency power amplifier, high speed power switching Complementary pair with 2SK213, 2SK214, 2SK215, 2SK216 Features Suitable for direct mounting High forward transfer admittance Excellent frequency respon

2SJ76, 2SJ77, 2SJ78, 2SJ79 Silicon P Channel MOS FET REJ03G0122-0200 (Previous: ADE-208-1179) Rev.2.00 Sep 07, 2005 Description High frequency and low frequency power amplifier, high speed power switching Complementary pair with 2SK213, 2SK214, 2SK215, 2SK216 Features Suitable for direct mou

Silicon MOS FETs (Small Signal) 2SJ0536 Silicon P-Channel MOS FET Secondary battery pack (Li ion battery, etc.) For switching 2.1±0.1 0.425 1.25±0.1 0.425 unit: mm q High-speed switching q S-mini type package, allowing downsizing of the sets and automatic insertion through the tape, magazine pa

2SJ103 TOSHIBA Field Effect Transistor Silicon P Channel Junction Type 2SJ103 For Audio Amplifier, Analog Switch, Constant Current and Impedance Converter Applications · · · · High breakdown voltage: VGDS = 50 V High input impedance: IGSS = 1.0 nA (max) (VGS = 30 V) Low RDS (ON): RDS (ON) = 270

TOSHIBA Field Effect Transistor Silicon P Channel Junction Type 2SJ104 For Audio Amplifier, Analog Switch, Constant Current and Impedance Converter Applications 2SJ104 Unit: mm · High input impedance: IGSS = 1.0 nA (max) (VGS = 25 V) · Low RDS (ON) = 40 Ω (typ.) (IDSS = 5 mA) · Complimentary