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Datasheet 2SK260 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 9 | 2SK260 | N-Channel MOSFET Transistor INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
2SK260
DESCRIPTION ·Drain Current –ID=5A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 400V(Min) ·Fast Switching Speed
APPLICATIONS ·Designed especially for high voltage,high speed applications
ABSOLUTE MAXIMUM RAT |
 Inchange Semiconductor |
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| 8 | 2SK2601 | N CHANNEL MOS TYPE (HIGH SPEED/ HIGH VOLTAGE SWITCHING/ DC-DC CONVERTER/ RELAY DRIVE AND MOTOR DRIVE APPLICATIONS) 2SK2601
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)
2SK2601
DC−DC Converter, Relay Drive and Motor Drive Applications
z Low drain−source ON-resistance z High forward transfer admittance z Low leakage current z Enhancement mode : RDS (ON) = 0.56 Ω (typ.) : |Yfs| = 7. |
 Toshiba Semiconductor |
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| 7 | 2SK2602 | Silicon N Channel MOS Type Field Effect Transistor 2SK2602
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)
2SK2602
Switching Regulator Applications
z Low drain−source ON-resistance : RDS (ON) = 0.9 Ω (typ.) z High forward transfer admittance : |Yfs| = 5.5 S (typ.) z Low leakage current : IDSS = 100 μA (max) (VDS = 600 V) |
Toshiba Semiconductor |
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| 6 | 2SK2603 | Silicon N Channel MOS Type Field Effect Transistor 2SK2603
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSIII)
2SK2603
Chopper Regulator, DC−DC Converter and Motor Drive Applications
Unit: mm
z Low drain−source ON resistance : RDS (ON) = 3.0 Ω (typ.) z High forward transfer admittance : |Yfs| = 2.6 S (typ.) z Low leakag |
Toshiba Semiconductor |
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