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Datasheet 2SK2796 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 3 | 2SK2796 | Silicon N Channel MOS FET High Speed Power Switching 2SK2796(L), 2SK2796(S)
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-534C (Z) 4th. Edition Jun 1998 Features
• Low on-resistance R DS(on) = 0.12Ω typ. • 4V gate drive devices. • High speed switching
Outline
DPAK |1
4
4
D 1 2 G 3
S
1 2
3
1. Gate 2. Drain 3. Source 4. |
 Hitachi Semiconductor |
 |
| 2 | 2SK2796L | Silicon N Channel MOS FET High Speed Power Switching 2SK2796(L), 2SK2796(S)
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-534C (Z) 4th. Edition Jun 1998 Features
• Low on-resistance R DS(on) = 0.12Ω typ. • 4V gate drive devices. • High speed switching
Outline
DPAK |1
4
4
D 1 2 G 3
S
1 2
3
1. Gate 2. Drain 3. Source 4. |
Hitachi Semiconductor |
|
| 1 | 2SK2796S | Silicon N Channel MOS FET High Speed Power Switching 2SK2796(L), 2SK2796(S)
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-534C (Z) 4th. Edition Jun 1998 Features
• Low on-resistance R DS(on) = 0.12Ω typ. • 4V gate drive devices. • High speed switching
Outline
DPAK |1
4
4
D 1 2 G 3
S
1 2
3
1. Gate 2. Drain 3. Source 4. |
Hitachi Semiconductor |
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