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Datasheet 2SK296 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | 2SK296 | SILICON N-CHANNEL MOS FET HIGH SPEED POWER SWITCHING | Hitachi Semiconductor | mosfet |
2 | 2SK2960 | Silicon N-Channel Power F-MOS FET Power F-MOS FETs
2SK2960
Silicon N-Channel Power F-MOS FET
s Features
q Avalanche energy capacity guaranteed: EAS > 250mJ q VGSS = ±30V guaranteed q High-speed switching: tf = 55ns q No secondary breakdown
unit: mm
4.6±0.2 φ3.2±0.1 9.9±0.3 2.9±0.2
M Di ain sc te on na tin nc ue e/ d
q Contac | Panasonic | mosfet |
3 | 2SK2961 | Silicon N Channel MOS Type Field Effect Transistor 2SK2961
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2−π−MOSV)
2SK2961
Relay Drive, Motor Drive and DC−DC Converter Application
Unit: mm
z Low drain−source ON resistance : RDS (ON) = 0.2 Ω (typ.) z High forward transfer admittance : |Yfs| = 2.0 S (typ.) z Low leakage cu | Toshiba Semiconductor | transistor |
4 | 2SK2962 | Silicon N Channel MOS Type Field Effect Transistor 2SK2962
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2−π−MOSV)
2SK2962
Chopper Regulator, DC−DC Converter and Motor Drive Applications
Unit: mm
z 4-V gate drive
z Low drain−source ON resistance
: RDS (ON) = 0.5 Ω (typ.)
z High forward transfer admittance
: |Yfs| = 1 | Toshiba Semiconductor | transistor |
5 | 2SK2963 | Silicon N Channel MOS Type Field Effect Transistor 2SK2963
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2-π-MOS V)
2SK2963
DC-DC Converter, Relay Drive and Motor Drive Applications
Unit: mm
• 4 V gate drive
• Low drain-source ON resistance: RDS (ON) = 0.5 Ω (typ.) • High forward transfer admittance: |Yfs| = 1.2 S (typ.) � | Toshiba Semiconductor | transistor |
2SK Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | 2SK0065 | Silicon N-Channel Junction FET Silicon Junction FETs (Small Signal)
2SK0065 (2SK65)
Silicon N-Channel Junction FET
For impedance conversion in low frequency For electret capacitor microphone
4.0±0.2 2.0±0.2 (0.8) 3.0±0.2
unit: mm
I Features
G Diode is connected between gate and source G Low noise voltage
I Absolute Maximu Panasonic Semiconductor mosfet | | |
2 | 2SK0123 | Silicon N-Channel Junction FET Silicon Junction FETs (Small Signal)
2SK0123 (2SK123)
Silicon N-Channel Junction FET
For impedance conversion in low frequency For electret capacitor microphone s Features
q High mutual conductance gm q Low noise voltage of NV
1 2 (0.95) (0.95) 1.9±0.1 2.90+0.20 –0.05 10˚
Unit: mm
0.40+0.10 � Panasonic Semiconductor mosfet | | |
3 | 2SK0198 | Silicon N-Channel Junction FET Silicon Junction FETs (Small Signal)
2SK0198 (2SK198)
Silicon N-Channel Junction FET
For low-frequency amplification
0.40+0.10 –0.05
Unit: mm
0.16+0.10 –0.06
s Features
q High mutual conductance gm q Low noise type q Mini-type package, allowing downsizing of the sets and automatic insertion t Panasonic Semiconductor mosfet | | |
4 | 2SK0301 | Silicon N-Channel Junction FET Silicon Junction FETs (Small Signal)
2SK0301 (2SK301)
Silicon N-Channel Junction FET
For low-frequency amplification For switching
5.0±0.2 5.1±0.2 4.0±0.2
unit: mm
I Features
13.5±0.5
G Low noies, high gain G High gate to drain voltage VGDO
0.45 –0.1
+0.2
0.45 –0.1
+0.2
I Absolute Panasonic Semiconductor mosfet | | |
5 | 2SK0601 | Silicon N-Channel MOS FET Silicon MOS FETs (Small Signal)
2SK601
Silicon N-Channel MOS FET
For switching
unit: mm
s Features
q Low ON-resistance RDS(on) q High-speed switching q Allowing to be driven directly by CMOS and TTL q Mini-power type package, allowing downsizing of the sets and automatic insertion through the tape Panasonic Semiconductor mosfet | | |
6 | 2SK0614 | Silicon N-Channel MOS FET Silicon MOS FETs (Small Signal)
2SK0614 (2SK614)
Silicon N-Channel MOS FET
For switching
unit: mm
I Features
5.0±0.2
4.0±0.2
0.7±0.1
0.7±0.2 12.9±0.5
G Low ON-resistance RDS(on) G High-speed switching G Allowing to be driven directly by CMOS and TTL
I Absolute Maximum Ratings (Ta = 25° Panasonic Semiconductor mosfet | | |
7 | 2SK0615 | SILICON N-CHANNEL MOS FET Silicon MOS FETs (Small Signal)
2SK0615 (2SK615)
Silicon N-Channel MOS FET
For switching
Unit: mm
I Features
2.0±0.2
G Low ON-resistance G High-speed switching G Allowing to be driven directly by CMOS and TTL G M type package, allowing easy automatic and manual insertion as well as stand-alone Panasonic Semiconductor mosfet | |
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Número de pieza | Descripción | Fabricantes | |
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