2SK3151 데이터시트 PDF ( Data sheet )

2SK3151 Silicon N Channel MOS FET High Speed Power Switching Features Low on-resistance RDS (on) = 11.5 mΩ typ. High speed switching 4 V gate drive device can be driven from 5 V source REJ03G1076-0400 (Previous: ADE-208-747B) Rev.4.00 Sep 07, 2005 Outline RENESAS Package code: PRSS0004ZE-A (

2SK3151 Silicon N Channel MOS FET High Speed Power Switching ADE-208-747A (Z) 2nd. Edition February 1999 Features Low on-resistance R DS (on) = 11.5 mΩ typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline TO 3P D 2 1 G 1 3 S 2 3 1. Gate 2. Drain (Flange

Silicon Junction FETs (Small Signal) 2SK0065 (2SK65) Silicon N-Channel Junction FET For impedance conversion in low frequency For electret capacitor microphone 4.0±0.2 2.0±0.2 (0.8) 3.0±0.2 unit: mm I Features G Diode is connected between gate and source G Low noise voltage I Absolute Maximu

Silicon Junction FETs (Small Signal) 2SK0123 (2SK123) Silicon N-Channel Junction FET For impedance conversion in low frequency For electret capacitor microphone s Features q High mutual conductance gm q Low noise voltage of NV 1 2 (0.95) (0.95) 1.9±0.1 2.90+0.20 0.05 10˚ Unit: mm 0.40+0.10 0.0

Silicon Junction FETs (Small Signal) 2SK0198 (2SK198) Silicon N-Channel Junction FET For low-frequency amplification 0.40+0.10 0.05 Unit: mm 0.16+0.10 0.06 s Features q High mutual conductance gm q Low noise type q Mini-type package, allowing downsizing of the sets and automatic insertion throu