2SK346 데이터시트 PDF ( Data sheet )

2SK3460 Absolute Maximum Ratings Symbol VDSS VGSS ID ID (pulse) *1 PD EAS *2 I AS Tch Tstg Ratings 150 +20, 10 ± 18 ± 72 35 (Tc = 25ºC) 180 18 150 55 to +150 (Ta = 25ºC) External dimensions 1 ...... FM20 Electrical Characteristics Symbol V(BR) DSS I GSS I DSS VTH Re (yfs) RDS(on) Ciss Coss Cr

2SK3462 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSV) 2SK3462 Unit: mm Switching Regulator, DC, DC Converter and Motor Drive Applications 4 V gate drive Low drain-source ON-resistance: RDS (ON) = 1.2 Ω (typ.) High forward transfer admittance: |Yfs| = 2.2 S (typ.) Low

2SK3466 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV) 2SK3466 Chopper Regulator Unit: mm Low drain-source ON resistance: RDS (ON) = 1.35 Ω (typ.) High forward transfer admittance: Yfs = 4.0 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS = 500 V) Enhancement-model:

Silicon Junction FETs (Small Signal) 2SK0065 (2SK65) Silicon N-Channel Junction FET For impedance conversion in low frequency For electret capacitor microphone 4.0±0.2 2.0±0.2 (0.8) 3.0±0.2 unit: mm I Features G Diode is connected between gate and source G Low noise voltage I Absolute Maximu

Silicon Junction FETs (Small Signal) 2SK0123 (2SK123) Silicon N-Channel Junction FET For impedance conversion in low frequency For electret capacitor microphone s Features q High mutual conductance gm q Low noise voltage of NV 1 2 (0.95) (0.95) 1.9±0.1 2.90+0.20 0.05 10˚ Unit: mm 0.40+0.10 0.0

Silicon Junction FETs (Small Signal) 2SK0198 (2SK198) Silicon N-Channel Junction FET For low-frequency amplification 0.40+0.10 0.05 Unit: mm 0.16+0.10 0.06 s Features q High mutual conductance gm q Low noise type q Mini-type package, allowing downsizing of the sets and automatic insertion throu