2SK3666 데이터시트 PDF ( Data sheet )

Ordering number : EN8158A 2SK3666 2SK3666 Applicatins N-Channel Junction Silicon FET Low-Frequency General-Purpose Amplifier, Impedance Converter Applications Low-frequency general-purpose amplifier, impedance conversion, infrared sensor applications. Features Small IGSS. Small Ciss Sp

Ordering number : EN8158C 2SK3666 N-Channel JFET 30V, 0.6 to 3.0mA, 6.5mS, CP http:, , onsemi.com Applications Low-frequency general-purpose amplifier, impedance conversion, infrared sensor applications Features Small IGSS Small Ciss Specifications Absolute Maximum Ratings at Ta=

UNISONIC TECHNOLOGIES CO., LTD 2SK3666 Preliminary N-CHANNEL JUNCTIN SILICON FET JFET DESCRIPTION The UTC 2SK3666 is an N-channel junctin silicon FET, it uses UTC’s advanced technology to provide the customers with low IGSS and low CRSS. The UTC 2SK3666 is suitable for low-frequency general-

Silicon Junction FETs (Small Signal) 2SK0065 (2SK65) Silicon N-Channel Junction FET For impedance conversion in low frequency For electret capacitor microphone 4.0±0.2 2.0±0.2 (0.8) 3.0±0.2 unit: mm I Features G Diode is connected between gate and source G Low noise voltage I Absolute Maximu

Silicon Junction FETs (Small Signal) 2SK0123 (2SK123) Silicon N-Channel Junction FET For impedance conversion in low frequency For electret capacitor microphone s Features q High mutual conductance gm q Low noise voltage of NV 1 2 (0.95) (0.95) 1.9±0.1 2.90+0.20 0.05 10˚ Unit: mm 0.40+0.10 0.0

Silicon Junction FETs (Small Signal) 2SK0198 (2SK198) Silicon N-Channel Junction FET For low-frequency amplification 0.40+0.10 0.05 Unit: mm 0.16+0.10 0.06 s Features q High mutual conductance gm q Low noise type q Mini-type package, allowing downsizing of the sets and automatic insertion throu