3EZ190 데이터시트 PDF ( Data sheet )

DATA SHEET 3EZ11~3EZ200 GLASS PASSIVATED JUNCTION SILICON ZENER DIODES VOLTAGE- 11 to 200 Volts Power - 3.0 Watts FEATURES Low profile package Built-in strain relief Glass passivated iunction Low inductance Typical ID less than 1.0 A above 11V Plastic package has Underwriters Laboratory Flamma

3EZ11 THRU 3EZ200 GLASS PASSIVATED JUNCTION SILICON ZENER DIODE VOLTAGE - 11 TO 200 Volts Power - 3.0 Watts FEATURES l l l l l l l l Low profile package Built-in strain relief Glass passivated junction Low inductance Excellent clamping capability Typical ID less than 1 A above 11V High temperature s

Certificate TH97, 10561QM Certificate TW00, 17276EM 3EZ3.9D10 ~ 3EZ200D10 SILICON ZENER DIODES VZ : 3.9 - 200 Volts PD : 3 Watts DO - 41 FEATURES : * Complete Voltage Range 3.9 to 200 Volts * High peak reverse power dissipation * High reliability * Low leakage current * Pb , RoHS Free 0.108

3EZ Series VZ : 3.9 - 400 Volts PD : 3 Watts FEATURES : * Complete Voltage Range 3.9 to 400 Volts * High peak reverse power dissipation * High reliability * Low leakage current SILICON ZENER DIODES DO - 41 0.107 (2.7) 0.080 (2.0) 1.00 (25.4) MIN. MECHANICAL DATA * Case : DO-41 Molded plastic * E

3EZ 1 … 3EZ 200 (3 W) Silicon-Power-Z-Diodes (non-planar technology) Silizium-Leistungs-Z-Dioden (fl chendiffundierte Dioden) Maximum power dissipation Maximale Verlustleistung Nominal Z-voltage Nominale Z-Spannung Plastic case Kunststoffgeh use Weight approx. Gewicht ca. Plastic material has U