3N166 데이터시트 PDF ( Data sheet )

Monolithic Dual P-Channel Enhancement Mode MOSFET General Purpose Amplifier 3N165 , 3N166 FEATURES CORPORATION Very High Impedance High Gate Breakdown Low Capacitance PIN CONFIGURATION ABSOLUTE MAXIMUM RATINGS (Note 1) (TA = 25oC unless otherwise specified) Drain-Source or Drain-Gate Voltage

3N165, 3N166 MONOLITHIC DUAL P-CHANNEL Linear Integrated Systems FEATURES VERY HIGH INPUT IMPEDANCE HIGH GATE BREAKDOWN ULTRA LOW LEAKAGE LOW CAPACITANCE ABSOLUTE MAXIMUM RATINGS (NOTE 1) (TA= 25°C unless otherwise noted) Drain-Source or Drain-Gate Voltage (NOTE 2) 3N165 3N166 Transient G-S Voltag

3N166 P-CHANNEL MOSFET The 3N166 is a monolithic dual enhancement mode P-Channel Mosfet FEATURES DIRECT REPLACEMENT FOR INTERSIL 3N166 ABSOLUTE MAXIMUM RATINGS1@ 25°C (unless otherwise noted) Maximum Temperatures The hermetically sealed TO-78 package is well suited Storage Temperature 65°C to +2

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTB3N100E, D Designer's TMOS E-FET .™ High Energy Power FET D 2 PAK for Surface Mount N Channel Enhancement Mode Silicon Gate The D2PAK package has the capability of housing a larger die than any existing surface mount package which