60N100D 데이터시트 PDF ( Data sheet )

FGL60N100D IGBT FGL60N100D General Description Insulated Gate Bipolar Transistors (IGBTs) with trench gate structure have superior performance in conduction and switching to planar gate structure, and also have wide noise immunity. These devices are well suitable for IH applications Features H

Shenzhen Tuofeng Semiconductor Technology Co., Ltd 60N03 Power MOSFET 60 Amps,30Volts N-Channel DPAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Typical Applications Power Supplies Converters Power Motor

N-Channel Enhancement Mode Power MOSFET AF60N03 Features - Simple Drive Requirement - Low Gate Charge - Fast Switching - RoHS Compliant - Pb Free Plating Product Product Summary BVDSS (V) 30 RDS(ON) (mΩ) 12 ID (A) 45 General Description The advanced power MOSFET provides the designer with

CMD60N03, CMU60N03 N-Ch 30V Fast Switching MOSFETs General Description Product Summery The 60N03 is N-channel MOSFET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC, DC converter with synchr