6AM14 데이터시트 PDF ( Data sheet )

6AM14 Silicon N-Channel, P-Channel Power MOS FET Array Application High speed power switching Features Low on-resistance Low drive current High speed switching High density mounting Outline 6AM14 Absolute Maximum Ratings (Ta = 25°C) Ratings Item Drain to source voltage Gate to source voltag

To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations i

To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations i

6AM13 Silicon N-Channel, P-Channel Complementary Power MOS FET Array ADE-208-1217 (Z) 1st. Edition Mar. 2001 Application High speed power switching Features Low on-resistance N-channel: RDS(on) ≤ 0.075 , VGS = 10 V, I D = 5 A P-channel: RDS(on) ≤ 0.12 , VGS = 10 V, I D = 5 A Capable of 4 V