AO4828 데이터시트 PDF ( Data sheet )

AO4828 60V Dual N-Channel MOSFET General Description The AO4828 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. Features VDS (V) = 60V ID = 4.5A (VGS = 10V) RDS(ON) < 56mΩ (VGS = 10V) RDS(O

Freescale AO4828, MC4828 N-Channel 60-V (D-S) MOSFET Key Features: Low rDS(on) trench technology Low thermal impedance Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC, DC Conversion Circuits PRODUCT SUMMARY rDS(on) (mΩ) 89 @ VGS = 10V

AO4302 30V N-Channel MOSFET General Description 30 36 Product Summary The AO4302 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications. VDS ID (at VGS=10V) RDS(ON) (at VG

AO4304 30V N-Channel MOSFET General Description Product Summary The AO4304 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications. VDS ID (at VGS=10V) RDS(ON) (at VGS=10V)

AO4310 36V N-Channel MOSFET General Description The AO4310 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance.Power losses are minimized due to an extremely low combination of RDS(ON) and Crss.In addition,switching behavior is