AON6428 데이터시트 PDF ( Data sheet )

AON6428 30V N-Channel MOSFET General Description The AON6428 uses advanced trench technology to provide excellent RDS(ON) , low gate charge.This device is suitable for use as a high side switch in SMPS and general purpose applications. Features VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at

AON6428 30V N-Channel MOSFET General Description The AON6428 uses advanced trench technology to provide excellent RDS(ON), low gate charge.This device is suitable for use as a high side switch in SMPS and general purpose applications. Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON

AON1605 20V P-Channel MOSFET General Description The AON1605 utilize advanced trench MOSFET technology in small DFN 1.0 x 0.6 package. This device is ideal for load switch applications. Product Summary VDS ID (at VGS=-4.5V) RDS(ON) (at VGS =-4.5V) RDS(ON) (at VGS =-2.5V) RDS(ON) (at VGS =-1.8V) -2

AOS Semiconductor Product Reliability Report AON1610, rev A Plastic Encapsulated Device ALPHA & OMEGA Semiconductor, Inc www.aosmd.com 1 This AOS product reliability report summarizes the qualification result for AON1610. Accelerated environmental tests are performed on a specific sample size

AON1611 20V P-Channel MOSFET General Description The AON1611 combines advanced trench MOSFET technology with a low resistance package to provide extremely low R DS(ON) . This device is ideal for load switch and battery protection applications. Features VDS ID (at VGS=-4.5V) RDS(ON) (at VGS =-4.5V)