AON6554 데이터시트 PDF ( Data sheet )

AON6554 30V N-Channel AlphaMOS General Description Latest Trench Power AlphaMOS (αMOS LV) technology Very Low RDS(ON) at 4.5V VGS Low Gate Charge High Current Capability RoHS and Halogen-Free Compliant Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) Applicatio

AON1605 20V P-Channel MOSFET General Description The AON1605 utilize advanced trench MOSFET technology in small DFN 1.0 x 0.6 package. This device is ideal for load switch applications. Product Summary VDS ID (at VGS=-4.5V) RDS(ON) (at VGS =-4.5V) RDS(ON) (at VGS =-2.5V) RDS(ON) (at VGS =-1.8V) -2

AOS Semiconductor Product Reliability Report AON1610, rev A Plastic Encapsulated Device ALPHA & OMEGA Semiconductor, Inc www.aosmd.com 1 This AOS product reliability report summarizes the qualification result for AON1610. Accelerated environmental tests are performed on a specific sample size

AON1611 20V P-Channel MOSFET General Description The AON1611 combines advanced trench MOSFET technology with a low resistance package to provide extremely low R DS(ON) . This device is ideal for load switch and battery protection applications. Features VDS ID (at VGS=-4.5V) RDS(ON) (at VGS =-4.5V)