AP18N20GP 데이터시트 PDF ( Data sheet )

AP18N20GS, P Pb Free Plating Product Advanced Power Electronics Corp. ▼ Low Gate Charge ▼ Simple Drive Requirement ▼ Fast Switching Characteristic ▼ RoHS Compliant G S D N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 200V 170mΩ 18A Description The Advanced Power MOSFETs from

Advanced Power Electronics Corp. AP18N20GP, S-3 N-channel Enhancement-mode Power MOSFET Simple Drive Requirement Low On-resistance Fast Switching Performance RoHS-compliant, halogen-free G S D BV DSS RDS(ON) ID 200V 170mΩ 18A Description Advanced Power MOSFETs from APEC provide the designer w

AP18N20GS, P-HF Halogen-Free Product Advanced Power Electronics Corp. ▼ Low Gate Charge ▼ Simple Drive Requirement ▼ Fast Switching Characteristic ▼ RoHS Compliant & Halogen-Free G N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID 200V 170mΩ 18A S Description Advanced Power M

AC Current transducer AP-B10 Split core transducer for the electronic measurement AC waveforms current, with galvanic isolation between the primary (High power) and the secondary circuits (Electronic circuit). Switch selectable ranges and RMS 0-5V and 0-10V switch selectable voltage output. IPN = 1

AC Current transducer AP-B420L Split core transducer for the electronic measurement AC waveforms current, with galvanic isolation between the primary (High power) and the secondary circuits (Electronic circuit). Switch selectable ranges and RMS 4-20mA current output. IPN = 10 .. 400 A Preliminary

AP1001BSQ Halogen-Free Product Advanced Power Electronics Corp. ▼ Lead-Free Package ▼ Low Conductance Loss ▼ Low Profile ( < 0.7mm ) G S N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID 30V 6mΩ 15A Description The AP1001BSQ used the latest APEC Power MOSFET silicon technology w