AWT6275 데이터시트 PDF ( Data sheet )

TM AWT6275 HELP IMT, WCDMA 3.4V, 27.5dBm Linear Power Amplifier Module PRELIMINARY DATA SHEET - Rev 1.8 FEATURES InGaP HBT Technology High Efficiency: 43% @ POUT = +27.5 dBm 21% @ POUT = +16 dBm 15% @ POUT = +7 dBm Low Quiescent Current: 16 mA Low Leakage Current in Shutdown Mode: <1

DCS1800, PCS1900 GaAs 4.8 V Single Supply Power Amplifier IC DESCRIPTION The AWT1902 is a 3 stage monolithic Power Amplifier IC suited for DCS 1800 (1710-1785) and PCS1900 (1850-1910) cellular telephone applications FEATURES  High Output Power High Efficiency Built in Pulse Control 16 Pin

Integrated High Power Amp 1610 MHz FEATURES High Output Intercept Point High Linearity True Surface Mount Package Internal Bias Circuit Requiring Nominal Input Voltages + 10% Low Cost Off Chip Output Matching Circuit Allows Application Optimization AWT1921 PRELIMINARY DATA SHEET - Rev 1.0 P

A DESCRIPTION The AWT1921 is a four stage monolithic amplifier for use in communication systems that require high gain and output intercept point. The device has been specifically designed for fixed satellite access equipment and handset booster amplifier applications. DESCRIPTION High Output Inter