BAW56T 데이터시트 PDF ( Data sheet )

Transys Electronics LIMITED SOT-523 Plastic-Encapsulated Diodes BAS16T, BAW56T, BAV70T, BAV99T SWITCHING DIODE FEATURES Power dissipation PD: 150 mW (Tamb=25℃) Forward Current IF: Reverse Voltage 75 m A VR: 85 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features Halogen free available upon request by adding suffix "-HF" xUltra-Small Surface Mount Package xFor General Purpose Switching Application

BAW56T, BAV70T, BAV99T Switching Diode SOT-523 Features Fast Switching Speed For General Purpose Switching Applications High Conductance Dimensions in inches and (millimeters) BAW56T Marking: JD BAV70T Marking: JJ BAV99T Marking: JE Maximum Ratings @TA=25℃ Parameter Reverse voltage Forwar

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-523 Plastic-Encapsulate Diode BAW56T, BAV70T, BAV99T SWITCHING DIODE FEATURES - Fast Switching Speed - For General Purpose Switching Applications - High Conductance BAW56T BAV70 T BAV99T SOT-523 MARKING:JD JD MARKING:JJ JJ MARKING:JE JE

BAW100 BAW100G SURFACE MOUNT DUAL, ISOLATED HIGH SPEED SILICON SWITCHING DIODES SOT-143 CASE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR BAW100 and BAW100G each consist of two electrically isolated high speed silicon switching diodes packaged in an epoxy molded SOT-1

SMD Type Silicon Switching Diode Array BAW100 Features For high-speed switching Electrically insulated diodes Diodes Unit: mm A b s o lu te M a x im u m R a tin g s T a = 2 5 P aram eter R e ve rs e vo lta g e P e a k re ve rs e vo lta g e F orw ard current S urge forw ard current, t = 1 s T o

Silicon Switching Diode Array For high-speed switching q Electrically insulated diodes q BAW 100 Type BAW 100 Marking JSs Ordering Code (tape and reel) Q62702-A376 Pin Configuration Package1) SOT-143 Maximum Ratings Parameter Reverse voltage Peak reverse voltage Forward current Surge forward