BCR8CS 데이터시트 PDF ( Data sheet )

MITSUBISHI SEMICONDUCTOR TRIAC BCR8CS MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE BCR8CS OUTLINE DRAWING Dimensions in mm 4 1.5 MAX 10.5 MAX 4.5 1.3 1.5 MAX 8.6±0.3 9.8±0.5 TYPE NAME 3.0 0.5 +0.3 0 0 +0.3 VOLTAGE CLASS 1 5 0.8 0.5 1 2 3 24 2.6±0.4 4.5

MITSUBISHI SEMICONDUCTOR TRIAC BCR8CS MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE BCR8CS OUTLINE DRAWING Dimensions in mm 4 1.5 MAX 10.5 MAX 4.5 1.3 1.5 MAX 8.6±0.3 9.8±0.5 TYPE NAME 3.0 0.5 +0.3 0 0 +0.3 VOLTAGE CLASS 1 5 0.8 0.5 1 2 3 24 2.6±0.4 4.5

BCR8CS-12LA Triac Medium Power Use REJ03G0338-0300 Rev.3.00 Nov 30, 2007 Features IT (RMS) : 8 A VDRM : 600 V IFGTI, IRGTI, IRGT III : 30 mA (20 mA)Note6 Non-Insulated Type Planar Passivation Type Outline RENESAS Package code: PRSS0004AB-A (Package name: TO-220S) 4 2, 4 1. 2. 3. 4. T1 Termin

BCR8CS-12LB Triac Medium Power Use (The product guaranteed maximum junction temperature of 150°C) REJ03G0468-0300 Rev.3.00 Nov 30, 2007 Features T (RMS) I :8A VDRM : 600 V IFGTI, IRGTI, IRGT III : 30 mA (20 mA)Note6 Non-Insulated Type Planar Passivation Type Outline RENESAS Package code:

To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These oper

BCR08AM-12 Triac Low Power Use REJ03G0343-0100 Rev.1.00 Aug.20.2004 Features IT (RMS) : 0.8 A VDRM : 600 V IRGTI, IRGTⅢ : 5 mA Planar Passivation Type Outline TO-92 2 1. T1 Terminal 2. T2 Terminal 3. Gate Terminal 3 1 1 3 2 Applications Electric fan, air cleaner, and other general purpose

MITSUBISHI SEMICONDUCTOR TRIAC BCR08AM-14 LOW POWER USE PLANAR PASSIVATION TYPE BCR08AM-14 OUTLINE DRAWING φ 5.0 MAX. Dimensions in mm 4.4 VOLTAGE CLASS TYPE NAME T1 TERMINAL T2 TERMINAL GATE TERMINAL CIRCUMSCRIBE CIRCLE φ 0.7 1.25 1.25 1.3 12.5 MIN. 5.0 MAX. 3.9 MAX.