BCW65B 데이터시트 PDF ( Data sheet )

BCW65 SERIES BCW66 SERIES SURFACE MOUNT NPN SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR BCW65 and BCW66 Series types are NPN Silicon Transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for gen

BL Galaxy Electrical NPN General Purpose Amplifier FEATURES - For general AF appilications. - High current gain. Pb Lead-free - Low collector-emitter saturation voltage. - Complementary types:BCW67,BCW68(PNP) APPLICATIONS - General purpose medium power amplifier. - Switching appilication. Pro

BCW65A,B,C MAXIMUM RATINGS CASE 318-02, 03, STYLE 6 SOT-23 (TO-236AA, AB) GENERAL PURPOSE TRANSISTOR NPN SILICON Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Continuous THERMAL CHARACTERISTICS Symbol vCEO vCBO vEBO ic Characteristic *Total Devi

Continental Device India Limited An ISO, TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BCW65A, BCW65B BCW65C GENERAL PURPOSE TRANSISTOR N P N transistor Marking BCW65A = EA BCW65B = EB BCW65C = EC PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration 1 =

SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES Complementary to BCW31, 32 MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING Collector-Base Voltage VCBO -30 Collector-Emitter Voltage VCEO -20 Emitter-Base Voltage VEBO -5 Collector Current I

SMD Type TransistIoCrs PNP General Purpose Transistors BCW29,BCW30 Features Low current (max. 100 mA). Low voltage (max. 32 V). +0.12.4 -0.1 SOT-23 2.9+0.1 -0.1 0.4+0.1 -0.1 3 12 0.95+0.1 -0.1 1.9+0.1 -0.1 Absolute Maximum Ratings Ta = 25 Parameter Symbol Collector-base voltage VCBO Colle