BCW67C 데이터시트 PDF ( Data sheet )

MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Continuous Symbol VCEO VCBO VEBO c BCW67 BCW68 32 45 45 60 5.0 800 Unit Vdc Vdc Vdc mAdc THERMAL CHARACTERISTICS Characteristic Symbol Total Device ADissipation, T = 25°C Derate

Features: t
For general AF applications t
High current gain t
Low collector-emitter saturation voltage t
Complementary types:BCW65,BCW66(NPN) Applications: t
and switching applications BCW67, BCW68 Ordering Information Type No. BCW67A, B, C BCW68F, G, H Marking: DA, DB, DC DF, DG, DH Maximum Ra

BCW67 SERIES BCW68 SERIES SURFACE MOUNT PNP SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR BCW67 and BCW68 Series types are PNP Silicon Transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for gen

Continental Device India Limited An ISO, TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BCW67, A, B, C BCW68, F, G, H GENERAL PURPOSE TRANSISTOR P N P transistor Marking BCW67A = DA BCW67B = DB BCW67C = DC BCW68F = DF BCW68G = DG BCW68H = DH PACKAGE OUTLINE DETAILS

SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES Complementary to BCW31, 32 MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING Collector-Base Voltage VCBO -30 Collector-Emitter Voltage VCEO -20 Emitter-Base Voltage VEBO -5 Collector Current I

SMD Type TransistIoCrs PNP General Purpose Transistors BCW29,BCW30 Features Low current (max. 100 mA). Low voltage (max. 32 V). +0.12.4 -0.1 SOT-23 2.9+0.1 -0.1 0.4+0.1 -0.1 3 12 0.95+0.1 -0.1 1.9+0.1 -0.1 Absolute Maximum Ratings Ta = 25 Parameter Symbol Collector-base voltage VCBO Colle