BF1108R 데이터시트 PDF ( Data sheet )

DISCRETE SEMICONDUCTORS DATA SHEET BF1108; BF1108R Silicon RF switches Product speci cation Supersedes data of 1999 Aug 19 1999 Nov 18 Philips Semiconductors Product speci cation Silicon RF switches FEATURES Specially designed for low loss RF switching up to 1 GHz. APPLICATIONS Various RF swi

BF 1005 Silicon N-Channel MOSFET Tetrode For low noise, high gain controlled input stages up to 1GH- Operating voltage 5V Integrated stabilized bias network ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BF 1005 Marking Ordering Code Pin Configuration MZs Q627

Silicon N-Channel MOSFET Tetrode For low noise, high gain controlled input stages up to 1 GHz Operating voltage 5V Integrated biasing network Pb-free (RoHS compliant) package1) Qualified according AEC Q101 BF1005... AGC RF Input Drain RF Output G2 + DC G1 GND ESD (Electrostatic discharge) s

Silicon N-Channel MOSFET Tetrode For low noise, high gain controlled input stages up to 1 GHz Operating voltage 5V Integrated biasing network Pb-free (RoHS compliant) package1) Qualified according AEC Q101 BF1005... AGC RF Input Drain RF Output G2 + DC G1 GND ESD (Electrostatic discharge) s