BF1205C 데이터시트 PDF ( Data sheet )

BF1205C Dual N-channel dual gate MOS-FET Rev. 01 18 May 2004 Product data sheet 1. Product pro le 1.1 General description The BF1205C is a combination of two dual gate MOS-FET ampli ers with shared source and gate 2 leads and an integrated switch. The integrated switch is operated by the gate 1 bi

BF 1005 Silicon N-Channel MOSFET Tetrode For low noise, high gain controlled input stages up to 1GH- Operating voltage 5V Integrated stabilized bias network ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BF 1005 Marking Ordering Code Pin Configuration MZs Q627

Silicon N-Channel MOSFET Tetrode For low noise, high gain controlled input stages up to 1 GHz Operating voltage 5V Integrated biasing network Pb-free (RoHS compliant) package1) Qualified according AEC Q101 BF1005... AGC RF Input Drain RF Output G2 + DC G1 GND ESD (Electrostatic discharge) s

Silicon N-Channel MOSFET Tetrode For low noise, high gain controlled input stages up to 1 GHz Operating voltage 5V Integrated biasing network Pb-free (RoHS compliant) package1) Qualified according AEC Q101 BF1005... AGC RF Input Drain RF Output G2 + DC G1 GND ESD (Electrostatic discharge) s