BFP405 데이터시트 PDF ( Data sheet )

SIEGET® 25 NPN Silicon RF Transistor For low current applications For oscillators up to 12 GH- Noise figure F = 1.15 dB at 1.8 GH- outstanding Gms = 22 dB at 1.8 GH- Transition frequency f T = 25 GH- Gold metalization for high reliability SIEGET ® 25 - Line Siemens Grounded Emitter Transisto

Low Noise Silicon Bipolar RF Transistor For low current applications For oscillators up to 12 GH- Minimum noise figure NFmin = 1.25 dB at 1.8 GHz Outstanding Gms = 23 dB at 1.8 GH- Pb-free (RoHS compliant) and halogen-free package with visible leads Qualification report according to AEC-Q101 av

Low Noise Silicon Bipolar RF Transistor For low current applications Minimum noise figure NFmin = 1.25 dB at 1.8 GHz Outstanding Gms = 22.5 dB at 1.8 GH- Transition frequency fT = 25 GH- Pb-free (RoHS compliant) and halogen-free thin small flat package (1.4 x 0.8 x 0.59 mm) with visible leads Q

BFP 136W NPN Silicon RF Transistor For power amplifier in DECT and PCN systems fT = 5.5GHz Gold metalization for high reliability ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration BFP 136W PAs Q62702-F1575 1=E 2=C 3=E 4=B P

BFP136W NPN Silicon RF Transistor
For power amplifier in DECT and PCN systems
fT = 5.5GH-
Gold metalization for high reliability 3 4 2 1 VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BFP136W Maximum Ratings Parameter Marking PAs 1=E Pin Configu