BFP420 데이터시트 PDF ( Data sheet )

SIEGET® 25 NPN Silicon RF Transistor For high gain low noise amplifiers For oscillators up to 10 GH- Noise figure F = 1.05 dB at 1.8 GH- outstanding Gms = 20 dB at 1.8 GH- Transition frequency f T = 25 GH- Gold metalization for high reliability SIEGET ® 25 - Line Siemens Grounded Emitter Tra

Low Noise Silicon Bipolar RF Transistor For high gain and low noise amplifiers Minimum noise figure NFmin = 1.1 dB at 1.8 GHz Outstanding Gms = 21 dB at 1.8 GH- For oscillators up to 10 GH- Transition frequency fT = 25 GH- Pb-free (RoHS compliant) and halogen-free package with visible leads Qu

BFP420F Low Noise Silicon Bipolar RF Transistor Data Sheet Revision 1.1, 2012-11-07 RF & Protection Devices Edition 2012-11-07 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shal

BFP 136W NPN Silicon RF Transistor For power amplifier in DECT and PCN systems fT = 5.5GHz Gold metalization for high reliability ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration BFP 136W PAs Q62702-F1575 1=E 2=C 3=E 4=B P

BFP136W NPN Silicon RF Transistor
For power amplifier in DECT and PCN systems
fT = 5.5GH-
Gold metalization for high reliability 3 4 2 1 VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BFP136W Maximum Ratings Parameter Marking PAs 1=E Pin Configu