BFR182T 데이터시트 PDF ( Data sheet )

BFR182T, BFR182TW Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low noise and high gain broadband amplifiers at collector currents from 1 mA to 20 mA. Features D Low noise figure D High power gain 1 1 13 581

BFR182T NPN Silicon RF Transistor Preliminary data
For low noise, high-gain broadband amplifiers at 3 collector currents from 1 mA to 20 mA
fT = 8 GHz F = 1.2 dB at 900 MHz 2 1 VPS05996 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BFR182T Maximum Ratings

BFR182T, BFR182TW Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low noise and high gain broadband amplifiers at collector currents from 1 mA to 20 mA. Features D Low noise figure D High power gain 1 1 13 581

DISCRETE SEMICONDUCTORS DATA SHEET BFR106 NPN 5 GH- wideband transistor Product specification September 1995 NXP Semiconductors NPN 5 GH- wideband transistor Product specification BFR106 DESCRIPTION NPN silicon planar epitaxial transistor in a plastic SOT23 envelope. It is primarily intended f

BFR 106 NPN Silicon RF Transistor For low noise, high-gain amplifiers For linear broadband amplifiers Special application: antenna amplifiers Complementary type: BFR 194 (PNP) ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuratio

Low Noise Silicon Bipolar RF Transistor High linearity low noise RF transistor 22 dBm OP1dB and 31 dBm OIP3 @ 900 MHz, 8 V, 70 mA For UHF , VHF applications Driver for multistage amplifiers For linear broadband and antenna amplifiers Collector design supports 5 V supply voltage Pb-free (RoHS