BLL6H0514-25 데이터시트 PDF ( Data sheet )

BLL6H0514-25 LDMOS driver transistor Rev. 02 17 March 2009 Objective data sheet 1. Product pro le 1.1 General description 25 W LDMOS transistor intended for pulsed applications in the 0.5 GH- to 1.4 GH- range. Table 1. Application information Typical RF performance at Tcase = 25 °C; IDq = 50 mA

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D379 BLL1214-250 L-band radar LDMOS transistor Product speci cation Supersedes data of 2002 Aug 06 2003 Aug 29 Philips Semiconductors Product speci cation L-band radar LDMOS transistor FEATURES High power gain Easy power control Excellent

BLL1214-250R LDMOS L-band radar power transistor Rev. 01 4 February 2010 Product data sheet 1. Product profile 1.1 General description Silicon N-channel enhancement model LDMOS power transistor encapsulated in a 2-lead flange package (SOT502A) with a ceramic cap. The common source is connected

DISCRETE SEMICONDUCTORS DATA SHEET M3D381 BLL1214-35 L-band radar LDMOS driver transistor Product speci cation 2002 Sep 27 Philips Semiconductors Product speci cation L-band radar LDMOS driver transistor FEATURES High power gain Easy power control Excellent ruggedness Source on mounting