BS170 데이터시트 PDF ( Data sheet )

2N7000, 2N7002, VQ1000J, P, BS170 Vishay Siliconix N-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY Part Number 2N7000 2N7002 VQ1000J VQ1000P BS170 60 V(BR)DSS Min (V) rDS(on) Max (W) 5 @ VGS = 10 V 7.5 @ VGS = 10 V 5.5 @ VGS = 10 V 5.5 @ VGS = 10 V 5 @ VGS = 10 V VGS(th) (V) 0.8 to 3 1 to 2.5 0.8 t

BS170 DMOS Transistors (N-Channel) TO-92 .181 (4.6) min. .492 (12.5) .181 (4.6) .142 (3.6) FEATURES High input impedance High-speed switching No minority carrier storage time CMOS logic compatible input No thermal runaway No secondary breakdown max. .022 (0.55) .098 (2.5) D G S MECHANICAL

DISCRETE SEMICONDUCTORS DATA SHEET BS170 N-channel vertical D-MOS transistor Product speci cation File under Discrete Semiconductors, SC13b April 1995 Philips Semiconductors Product speci cation N-channel vertical D-MOS transistor DESCRIPTION N-channel enhancement mode vertical D-MOS transistor

BS170 Preferred Device Small Signal MOSFET 500 mA, 60 Volts N Channel TO 92 (TO 226) Features http:, , onsemi.com Pb Free Package is Available* MAXIMUM RATINGS Rating Drain Source Voltage Gate Source Voltage Continuous Non repetitive (tp ≤ 50 ms) Drain Current (Note) Total Device Dissipati

S Series 100 Watt DC-DC Converters Wide input voltage ranges from 8...385 V DC 1or 2 isolated outputs up to 48 V DC 4 kV AC I, O electric strengh test voltage LGA Rugged electrical and mechanical design Fully isolated outputs Operating ambient temperature range 40...71 °C with convection cool

Siliconix VN2010L, BS107 N Channel Enhancement Mode MOS Transistors Product Summary Part Number VN2010L BS107 V(BR)DSS Min (V) 200 rDS(on) Max (W) 10 @ VGS = 4.5 V 28 @ VGS = 2.8 V VGS(th) (V) 0.8 to 1.8 0.8 to 3 ID (A) 0.19 0.12 Features Benefits D Low On Resistance: 6 W D Secondary Brea