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Datasheet BSS75 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 3 | BSS75 | HIGH VOLTAGE TRANSISTOR T
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
@TaTotal Device Dissipation
= 25°C
Derate above 25°C
Total Device Dissipation @Tc = 25°C
Derate above 25°C
Operating and Storage Junction Temperature Range
THER |
 Motorola Semiconductors |
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| 2 | BSS75 | Bipolar PNP Device BSS75
Dimensions in mm (inches).
5.84 (0.230) 5.31 (0.209)
4.95 (0.195) 4.52 (0.178)
Bipolar PNP Device in a Hermetically sealed TO18
Metal Package.
0.48 (0.019) 0.41 (0.016)
dia.
2.54 (0.100) Nom.
31 2
1 – Emitter
TO18 (TO206AA) PINOUTS
2 – Base
3 – Collector
Bipolar PNP Device.
VCEO |
 Seme LAB |
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| 1 | BSS75 | PNP SILICON HIGH VOLTAGE TRANSISTOR BSS74 BSS75 BSS76
DATA SHEET
PNP SILICON HIGH VOLTAGE TRANSISTOR
JEDEC TO-18 CASE
DESCRIPTION The CENTRAL SEMICONDUCTOR BSS74 series types are hermetically sealed PNP small signal transistors manufactured by the epitaxial planar process designed for high voltage amplifier applications.
MAXIMUM |
 Central Semiconductor |
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