BU102 데이터시트 PDF ( Data sheet )

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BU102 DESCRIPTION ·With TO-3 package ·VCEO(sus)=150V (min) APPLICATIONS ·Designed for horizontal deflection output stage of CTV receivers PINNING(see fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (T

R 深 市晶 子有限公司 www.jdsemi.cn ◆Si NPN ◆RoHS COMPLIANT BU102S Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. 1．APPLICATION Fluorescent Lamp、Charger and Switch-mode power supplies 2．FEATURES High voltage capability Features of good high temperature High s

深 市 半 有限公司 SHENZHENPENGAI SEMICONDUCTOR CO.LTD TEL:0755-27656829 FAX:0755-23443106 BU102S 主要用途： 子 流器、 能 、充 器及各 功率 路。 NPN 主要特点： 耐 高、 速度快、安全工作 大、 出特性好、 流容量大。 封 形式： TO-92 限

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BU100 DESCRIPTION ·With TO-3 package ·High voltage capability APPLICATIONS ·For horizontal deflection output stage of CTV receivers and high voltalge, fast switching and industrial applications PINNING (See Fig.2) PI

New Product BU1006 thru BU1010 Vishay General Semiconductor Enhanced PowerBridge® Rectifiers PowerBridge® + Case Style BU ~ ~ ~ ~ + + ~ ~ - FEATURES UL recognition file number E309391 (QQQX2) UL 1557 (see *) Thin single in-line package Available for BU-5S lead forming option (par

www.vishay.com BU1006-E3, BU1008-E3, BU1010-E3 Vishay General Semiconductor Enhanced isoCink+™ Bridge Rectifiers isoCink+™ + ~~ - Case Style BU - ~~+ +~~ - * Tested to UL standard for safety electrically isolated semiconductor devices. UL 1557 4th edition. Dielectric tested to maximum case