BU508DF 데이터시트 PDF ( Data sheet )

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU508DF GENERAL DESCRIPTION High voltage, high-speed switching npn transistors in a fully isolated SOT199 envelope with integrated efficiency diode, primarily for use in horizontal deflection circuits of colour televi

BU508DF GENERAL DESCRIPTION SILICON DIFFUSED POWER TRANSISTOR Highvoltage,high-speed switching npn transistors in a plastic envelope with integrated efficiency,primarily for use in horizontal deflection circuites of colour television receivers QUICK REFERENCE DATA SYMBOL TOP-3Fa CONDITIONS VBE =

NPN BU508DF SILICON DIFFUSED POWER TRANSISTORS The BU508DF is NPN transistors in a fully isolated SOT199 envelope (with integrated efficiency diode for the BU508DF). They are a high voltage, high speed switching and they are intended for use in horizontal deflexion circuits of colour television rec

Continental Device India Limited An IS, ISO 9002 and IECQ Certified Manufacturer IS, ISO 9002 Lic# QSC, L- 000019.2 NPN POWER TRANSISTORS BU508F, BU508AF, BU508DF TO- 3P Fully Isolated Plastic Package C B E Fast Switching, High Voltage Devices for use in Horizontal Deflection Circuits of Col

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BU500 DESCRIPTION ·With TO-3 package ·Low collector saturation voltage APPLICATIONS ·Designed for use in large screen color deflection circuits. PINNING(see fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified ou