BUT56A 데이터시트 PDF ( Data sheet )

BUT56A NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE SWITCHING USE IN HORIZONTAL DEFLECTION OUTPUT STAGE SC-65 ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Collector-Base Voltage Collector-EmitterVoltage Emitter-Base voltage Collector Current (DC) Collector Peck Current Base Current (DC)

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BUT56 BUT56A DESCRIPTION ·With TO-220C package ·High voltage;high speed ·High power dissipation APPLICATIONS ·Switching mode power supply PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTI

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® BUT100 HIGH POWER NPN SILICON TRANSISTOR s STMicroelectronics PREFERRED SALESTYPE s NPN TRANSISTOR s HIGH CURRENT CAPABILITY s FAST SWITCHING SPEED s HIGH RUGGEDNESS APPLICATION s MOTOR CONTROL s UNINTERRUPTABLE POWER SUPPLY DESCRIPTION The BUT100 is a Multiepitaxial Planar NPN Transistor in TO

DISCRETE SEMICONDUCTORS DATA SHEET BUT11; BUT11A Silicon diffused power transistors Product speci cation Supersedes data of February 1996 File under Discrete Semiconductors, SC06 1997 Aug 13 Philips Semiconductors Product speci cation Silicon diffused power transistors DESCRIPTION High-voltage,

BUT11 NPN SILICON POWER TRANSISTOR Copyright 1997, Power Innovations Limited, UK MAY 1989 - REVISED MARCH 1997 q q q Rugged Triple-Diffused Planar Construction 100 W at 25°C Case Temperature 5 A Continuous Collector Current B C E 1 2 3 TO-220 PACKAGE (TOP VIEW) Pin 2 is in electrical contact wi