BUX18A 데이터시트 PDF ( Data sheet )

INCHANGE Semiconductor isc Silicon NPN Power Transistors DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 200V(Min)- BUX18 = 325V(Min)- BUX18A = 375V(Min)- BUX18B = 425V(Min)- BUX18C ·High Switching Speed ·High Power Dissipation APPLICATIONS ·Designed for use in off-line power

SILICON MULTI-EPITAXIAL NPN TRANSISTOR BUX10 High Current Capability. Hermetic TO3 Metal package. Designed For Switching and Linear Applications Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated) VCBO Collector Base Voltage 160V VCEX Collector Emit

® BUX10 HIGH POWER NPN SILICON TRANSISTOR s STMicroelectronics PREFERRED SALESTYPE s NPN TRANSISTOR s HIGH CURRENT CAPABILITY s FAST SWITCHING SPEED APPLICATIONS s MOTOR CONTROL s LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT DESCRIPTION The BUX10 is a silicon Multi-Epitaxial Planar NPN transistor in

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BUX10 DESCRIPTION ·With TO-3 package ·High current capability ·Fast switching speed APPLICATIONS ·Motor control ·Linear and switching industrial equipment PINNING(see fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 s